Etching of Crystalline Silicon in Thermal Environment

Authors

  • Shobha Kanta Lamichhane Department of Physics, Prithvi Narayan, Campus, Pokhara
  • Min Raj Lamsal Department of Physics, Prithvi Narayan, Campus, Pokhara

DOI:

https://doi.org/10.3126/hj.v2i2.5209

Keywords:

Isotropic and anisotropic etching, MEMS, SOI, LPCVD.

Abstract

Thin wafer have become a basic need for a wide variety of new microelectronic products. Wafers that have been thinned using wet etch process on the backside have less stress compared with standard mechanical back grinding. Isotropic wet etching of silicon is typically done with a mixture of nitric and hydrofluoric acids. As the silicon is etched and incorporated in the etching solution the etch rate will decrease with time. This variation has been modeled. The focus of this paper is to compare the process control technique for maintaining a consistent etch rate as a function of time and wafer processed.

Keywords: Isotropic and anisotropic etching; MEMS; SOI; LPCVD

The Himalayan Physics

Vol.2, No.2, May, 2011

Page: 38-42

Uploaded Date: 1 August, 2011

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Published

2011-07-31

How to Cite

Lamichhane, S. K., & Lamsal, M. R. (2011). Etching of Crystalline Silicon in Thermal Environment. Himalayan Physics, 2(2), 38–42. https://doi.org/10.3126/hj.v2i2.5209

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