Compositional, Structural, and Optical Characterizations of In1-XGaxN Epilayers Grown by High Pressure Chemical Vapor Deposition

Authors

  • Ananta R. Acharya Georgia State University, Department of Physics and Astronomy, Atlanta
  • Brian D. Thoms Georgia State University, Department of Physics and Astronomy, Atlanta

DOI:

https://doi.org/10.3126/hj.v3i0.7267

Keywords:

In1-xGaxN, AES, XRD, Absorption band edge

Abstract

The compositional, structural and optical characterizations of In1-xGaxN epilayers grown by high pressure chemical vapor deposition have been carried out using Auger electron spectroscopy, x-ray diffraction and optical transmission spectroscopy. Auger electron spectroscopy revealed 14% gallium and 86% indium composition of the total metal contents in the In1-xGaxN epilayers. X-ray diffraction pattern showed three prominent peaks centered at 31.4?, 32.86? and 34.5? which are assigned to In1-xGaxN (0002), In (101) and GaN (0002) Bragg reflexes respectively. These results indicate no macroscopic observable phase separation in the analyzed In1-xGaxN sample. The optical transmission spectroscopy and the Beer-Lambert’s law quatified the absorption band edge to be 1.6 eV for the analyzed In1-xGaxN epilayers.


The Himalayan Physics
Vol. 3, No. 3
2012

Page: 6-9

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Published

2012-12-26

How to Cite

Acharya, A. R., & Thoms, B. D. (2012). Compositional, Structural, and Optical Characterizations of In1-XGaxN Epilayers Grown by High Pressure Chemical Vapor Deposition. Himalayan Physics, 3, 6–9. https://doi.org/10.3126/hj.v3i0.7267

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