Simulation Study of AlN Spacer Layer Thickness on AlGaN/GaN HEMT

Authors

  • Niraj Man Shrestha Compound Semiconductor Device Laboratory, Department of Material Science and Engineering
  • Yuen Yee Wang Compound Semiconductor Device Laboratory, Department of Material Science and Engineering
  • Yiming Li Parallel and Scientific Computing Laboratory, Department of Electrical and Computer Engineering National Chiao Tung University, 1001 University Road, Hsinchu
  • E. Y. Chang Compound Semiconductor Device Laboratory, Department of Material Science and Engineering

DOI:

https://doi.org/10.3126/hj.v4i0.9419

Keywords:

HEMT, Spacer layer, Mobility, Carrier concentration, Scattering, Simulation

Abstract

High electron mobility transistor (HEMT)Two-dimensional electron gas (2DEG) formed at AlGaN/GaN interface is a critical part to tune the characteristic of AlGaN/GaN HEMT devices. Introduction of AlN spacer layer in between AlGaN and GaN layer is one of the way to improve 2DEG density, mobility, and drain current. Carrier concentration, mobility and conduction band offset for different spacer layer thickness was simulated by using Silvaco simulation tool. Our device simulations showed that carrier concentration, mobility are enhance on introduction of AlN spacer layer in HEMT. In addition, carrier properties of HEMT also depend on thickness of spacer layer. Our simulation showed that the mobility of 2DEG attains its maximum value at the 0.5 nm thick AlN layer but carrier concentration increases with spacer thickness. Finally, drain current increases with increasing spacer layer thickness and reach maximum value at 1.2nm thick spacer layer.

The Himalayan Physics

Vol. 4, No. 4, 2013

Page: 14-17

Uploaded date: 12/22/2013

 

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Author Biography

Yiming Li, Parallel and Scientific Computing Laboratory, Department of Electrical and Computer Engineering National Chiao Tung University, 1001 University Road, Hsinchu

Parallel and Scientific Computing Laboratory, Department of Electrical and Computer EngineeringNational Chiao Tung University, 1001 University Road, Hsinchu

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Published

2013-12-22

How to Cite

Shrestha, N. M., Wang, Y. Y., Li, Y., & Chang, E. Y. (2013). Simulation Study of AlN Spacer Layer Thickness on AlGaN/GaN HEMT. Himalayan Physics, 4, 14–17. https://doi.org/10.3126/hj.v4i0.9419

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