Effects of Concentration of Triethanolamine and Annealing Temperature on Band Gap of Thin Film of Tin Sulphide Prepared by Chemical Bath Deposition Method

Authors

  • Leela Pradban Joshi Department of Physics, Amrit Science Campus, Tribhuvan University, Kathmandu
  • Laxmi Risal Department of Physics, Patan Multiple Campus, Tribhuvan University, Kathmandu
  • Shankar Prasad Shrestha Department of Physics, Patan Multiple Campus, Tribhuvan University, Kathmandu

DOI:

https://doi.org/10.3126/jnphyssoc.v3i1.14436

Keywords:

Thin films, optical band gap, photovoltaic materials, X-ray diffraction

Abstract

Thin films of Tin Sulphide (SnS) were deposited by chemical bath deposition technique using a precursor solution of stannous chloride (SnCl2.2H2O), thioacetamide (TA), triethanolamine (TEA), ammonia (NH3), and distilled water. The effects of concentration of triethanolamine and annealing temperature on the growth of SnS films were studied to optimize the growth conditions. X-ray diffraction study shows the deposited films were polycrystalline in nature and orthorhombic in structure. The optical direct and indirect band gap values of SnS films prepared with 15ml of TEA were found to be 1.76 eV and 0.89 eV respectively. Annealing the sample prepared with 12ml of TEA results increase in band gap from 1.79eV to 3.32eV.

Journal of Nepal Physical Society, 2015, Vol. 3(1): 1-5

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Published

2016-01-28

How to Cite

Joshi, L. P., Risal, L., & Shrestha, S. P. (2016). Effects of Concentration of Triethanolamine and Annealing Temperature on Band Gap of Thin Film of Tin Sulphide Prepared by Chemical Bath Deposition Method. Journal of Nepal Physical Society, 3(1), 1–5. https://doi.org/10.3126/jnphyssoc.v3i1.14436

Issue

Vol. 3 No. 1 (2015)

Section

Articles

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