Synthesis Of Zincoxide Nanorods And Its Application To Humidity Sensor

Authors

  • Indra Bahadur Karki Patan Multiple Campus, Department of Physics, Tribhuvan University, Kathmandu
  • Jeevan Jyoti Nakarmi Central Department of Physics, Tribhuvan University, Kathmandu
  • Suman Chatterjee Department of Physics, University of North Bengal, Siliguri

DOI:

https://doi.org/10.3126/jist.v20i1.13908

Keywords:

Zinc oxid nanorod, thinfilm, sensor, XRD, SEM

Abstract

The present study is concerned the sensing behavior of ZnO nanorods thin films application to humidity sensors. ZnO nanorods were fabricated on a glass substrate by sol-gel spin coating technique. The crystal structure of the resulting thin films was investigated by X-ray diffraction (XRD). Minimum crystalline grain size of this film was found about 5nm. Surface morphology of the film was investigated by Scanning Electron Microscope (SEM). SEM image shows rods like films which are evenly distributed on the surface of the sample. The film on a glass substrate explored for humidity sensing of controlled humid environment by measuring electrical resistance. The resistance falls from M Ohms to K ohms as percentage relative humidity increases from 20 to 90 %.

Journal of Institute of Science and Technology, 2015, 20(1): 36-39

Downloads

Download data is not yet available.
Abstract
949
PDF
1348

Downloads

Published

2015-11-25

How to Cite

Karki, I. B., Nakarmi, J. J., & Chatterjee, S. (2015). Synthesis Of Zincoxide Nanorods And Its Application To Humidity Sensor. Journal of Institute of Science and Technology, 20(1), 36–39. https://doi.org/10.3126/jist.v20i1.13908

Issue

Vol. 20 No. 1 (2015)

Section

Research Articles

License

The views and interpretations in this journal are those of the author(s). They are not attributable to the Institute of Science and Technology, T.U. and do not imply the expression of any opinion concerning the legal status of any country, territory, city, area of its authorities, or concerning the delimitation of its frontiers of boundaries.

The copyright of the articles is held by the Institute of Science and Technology, T.U.