Numerical Approach of Single-Junction InGaN Solar Cell Affected by Carrier Lifetime and Temperature

Authors

  • D. Parajuli Department of Physics, Tri-Chandra Multiple Campus, Ghantaghar, Kathmandu, Nepal
  • Viplav Bhandari Department of Physics, Tri-Chandra Multiple Campus, Ghantaghar, Kathmandu, Nepal
  • Devendra K.C. Myrveien 13, 9740 Lebesby, Norway
  • Ajita Thapaliya Department of Physics, Tri-Chandra Multiple Campus, Ghantaghar, Kathmandu, Nepal
  • Amrit Subedi Department of Physics, Tri-Chandra Multiple Campus, Ghantaghar, Kathmandu, Nepal
  • Amrit Dhakal Department of Physics, Tri-Chandra Multiple Campus, Ghantaghar, Kathmandu, Nepal
  • Sandip Dangi Department of Physics, Tri-Chandra Multiple Campus, Ghantaghar, Kathmandu, Nepal
  • Rabina Koirala Department of Physics, Tri-Chandra Multiple Campus, Ghantaghar, Kathmandu, Nepal
  • Manish Bhatta Department of Physics, Tri-Chandra Multiple Campus, Ghantaghar, Kathmandu, Nepal

DOI:

https://doi.org/10.3126/pdmdj.v5i1.52309

Keywords:

InGaN solar cell, single junction, bulk recombination, PC1D

Abstract

The PC1D simulation aand origin software were successfully used for the study of Carrier Lifetime and Temperature effect on InGaN Single-Junction Solar Cell. For the simulation, the total device area was 100 cm2, dielectric constant 13.1, band gap 1.35eV, intrinsic constant is 1×1010 cm-3, doping concentration is 1×1017 cm-3, electron number and hole number 1000 and 170 respectively, and the refractive index was 3.58. The optimized temperature and bulk recombination were 25°C and 1000μs respectively along with the efficiency of 18.258 % for both n and p - InGaN solar cell. Several graphs were plotted under the following conditions: a) bulk recombination time of p-InGaN and temperature are kept constant at 1000 μs and 25°C, the variation of bulk recombination time of n - type InGaN solar cell with base current and voltage, maximum current and voltage, and efficiency and maximum power were studied. b) bulk recombination time of n-InGaN and temperature are kept constant at 1000 μs and 25°C, the variation of bulk recombination time of p - type InGaN solar cell with base current and voltage, maximum current and voltage, and efficiency and maximum power were studied.

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Published

2023-02-15

How to Cite

Parajuli, D., Bhandari, V., K.C., D., Thapaliya, A., Subedi, A., Dhakal, A., Dangi, S., Koirala, R., & Bhatta, M. (2023). Numerical Approach of Single-Junction InGaN Solar Cell Affected by Carrier Lifetime and Temperature. Pragya Darshan प्रज्ञा दर्शन, 5(1), 58–63. https://doi.org/10.3126/pdmdj.v5i1.52309

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